DMT6007LFG Series

60V N-Channel Enhancement Mode MOSFET

Catalog

60V N-Channel Enhancement Mode MOSFET

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs
Diodes Inc DMT6007LFG-13	POWERDI3333-8	2090 pF	20 V	15 A 80 A	60 V	Surface Mount	2.2 W 62.5 W	41.3 nC	4.5 V 10 V	-55 °C	150 °C	8-PowerVDFN	N-Channel	2 V	MOSFET (Metal Oxide)	6 mOhm

Catalog

60V N-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON)– Ensures On-State Losses are Minimized

• Excellent QGD× RDS(ON)Product (FOM)

• Advanced Technology for DC-DC Converters

• Small form factor thermally efficient package enables higher density end products

• Occupies just 33% of the board area by enabling smaller end products

• 100% UIS (Avalanche) Rated

• Lead-Free Finish; RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• Qualified to AEC-Q101 Standards for High Reliability

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.