DMT6007LFG-13
ActiveDiodes Inc
MOSFETS 60V N-CH ENH FET 20VGSS 80A 62.5W
DMT6007LFG-13
ActiveDiodes Inc
MOSFETS 60V N-CH ENH FET 20VGSS 80A 62.5W
Description
General part information
DMT6007LFG-13
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT6007LFG-13 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 15 A |
| Current - Continuous Drain (Id) (Tc) | 80 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 41.3 nC |
| Input Capacitance (Ciss) (Max) | 2090 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Name | POWERDI3333-8 |
| Power Dissipation (Max) | 2.2 W, 62.5 W |
| Rds On (Max) | 6 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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CAD
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