CSD16327Q3 Series
25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.8 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.8 mOhm
| Part | Vgs (Max) | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Supplier Device Package | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Technology | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | FET Type | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD16327Q3 | -8 V, 10 V | 8-PowerTDFN | 150 °C | -55 °C | Surface Mount | 8-VSON-CLIP (3.3x3.3) | 3 W | 1300 pF | 25 V | 60 A | MOSFET (Metal Oxide) | 3 V, 8 V | 4 mOhm | N-Channel | 1.4 V |
Key Features
• Optimized for 5-V Gate DriveUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic PackageOptimized for 5-V Gate DriveUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic Package
Description
AI
This 25-V, 3.4-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.
This 25-V, 3.4-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.