TPS1120 Series

Catalog

DUAL P-CHANNEL ENHANCEMENENT-MODE MOSFET

Part	Rds On (Max)	Mounting Type	Package Length	Package Name	Package Width	Technology	Vgs(th) (Max)	Channel Count	Configuration	Configuration - Features	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id)	Power - Max	FET Feature	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)
Texas Instruments TPS1120D	180 mOhm	Surface Mount	0.154 in	8-SOIC	3.9 mm	MOSFET (Metal Oxide)	1.5 V	2	P-Channel	Dual	15 V	1.17 A	840 mW	Logic Level Gate	-40 °C	150 °C	5.45 nC
Texas Instruments TPS1120DR	180 mOhm	Surface Mount	0.154 in	8-SOIC	3.9 mm	MOSFET (Metal Oxide)	1.5 V	2	P-Channel	Dual	15 V	1.17 A	840 mW	Logic Level Gate	-40 °C	150 °C	5.45 nC