CSD23285 Series
Manufacturer: Texas Instruments
Beta
⌘K
-12-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.8 MM X 1.5 MM, 35 MOHM, GATE ESD PROTECTION
| Part | Package / Case | Vgs (Max) | Mounting Type | Gate Charge (Max) | Package Name | Rds On (Max) | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Power Dissipation (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Current - Continuous Drain (Id) (Ta) | FET Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Texas Instruments | 3-SMD 3-XFDFN No Lead | -6 V | Surface Mount | 4.2 nC | 3-PICOSTAR | 35 mOhm | 950 mV | 12 V | 628 pF | -55 °C | 150 °C | 500 mW | 4.5 V | 1.5 V | 5.4 A | P-Channel | MOSFET (Metal Oxide) |