IC DRAM 2GBIT LVSTL 11 200WFBGA
Part | Clock Frequency | Operating Temperature [Max] | Operating Temperature [Min] | Memory Organization | Write Cycle Time - Word, Page | Memory Type | Memory Format | Mounting Type | Memory Size | Voltage - Supply [Min] | Voltage - Supply [Max] | Supplier Device Package | Technology | Package / Case | Memory Interface | Supplier Device Package [y] | Supplier Device Package [x] | Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Winbond Electronics W66BQ6NBUAGJ | 1866 MHz | 105 °C | -40 °C | 128 M | 18 ns | Volatile | DRAM | Surface Mount | 2 Gbit | 1.06 V, 1.7 V | 1.17 V, 1.95 V | 200-WFBGA (10x14.5) | SDRAM - Mobile LPDDR4X | 200-WFBGA | ||||
Winbond Electronics W66BQ6NBUAFJ TR | 1.6 GHz | 105 °C | -40 °C | 128 M | 18 ns | Volatile | DRAM | Surface Mount | 2 Gbit | 1.06 V, 1.7 V | 1.17 V, 1.95 V | 200-WFBGA (10x14.5) | SDRAM - Mobile LPDDR4X | 200-WFBGA | ||||
Winbond Electronics W66BQ6NBQAGJ | 1.867 GHz | 105 °C | -40 °C | 128 M | 18 ns | Volatile | DRAM | Surface Mount | 2 Gbit | 1.06 V, 1.7 V | 1.17 V, 1.95 V | 200-TFBGA | SDRAM - Mobile LPDDR4X | 200-TFBGA | LVSTL_06 | 14.5 | 10 | 3.6 ns |
Winbond Electronics W66BQ6NBUAFJ | 1.6 GHz | 105 °C | -40 °C | 128 M | 18 ns | Volatile | DRAM | Surface Mount | 2 Gbit | 1.06 V, 1.7 V | 1.17 V, 1.95 V | 200-WFBGA (10x14.5) | SDRAM - Mobile LPDDR4X | 200-WFBGA | ||||
Winbond Electronics W66BQ6NBUAGJ TR | 1866 MHz | 105 °C | -40 °C | 128 M | 18 ns | Volatile | DRAM | Surface Mount | 2 Gbit | 1.06 V, 1.7 V | 1.17 V, 1.95 V | 200-WFBGA (10x14.5) | SDRAM - Mobile LPDDR4X | 200-WFBGA | ||||
Winbond Electronics W66BQ6NBUAHJ | 2.133 GHz | 105 °C | -40 °C | 128 M | 18 ns | Volatile | DRAM | Surface Mount | 2 Gbit | 1.06 V, 1.7 V | 1.17 V, 1.95 V | 200-WFBGA (10x14.5) | SDRAM - Mobile LPDDR4X | 200-WFBGA |