DGD2003 Series

Catalog

MOSFET DRIVER, 2 CHANNELS, HALF BRIDGE, HIGH SIDE, 600 MA, 10 V TO 20 V, 150 NS, 8 PINS, SOIC

Part	Voltage - Supply [Max]	Voltage - Supply [Min]	Number of Drivers	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Channel Type	Logic Voltage - VIL, VIH	Operating Temperature [Min]	Operating Temperature [Max]	Input Type	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Driven Configuration	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	High Side Voltage - Max (Bootstrap) [Max]
Diodes Inc DGD2003S8-13	20 V	10 VDC	2	290 mA	600 mA	Synchronous	0.8 V 2.5 V	-40 °C	125 °C	Non-Inverting	N-Channel MOSFET	35 ns	70 ns	Half-Bridge	Surface Mount	8-SOIC	3.9 mm	0.154 in	8-SO Type TH	200 V

Catalog

Key Features

• Floating High-Side Driver in Bootstrap Operation to 200V

• Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuration

• 290mA Source/600mA Sink Output Current Capability

• Outputs Tolerant to Negative Transients

• Internal Dead Time of 420ns to Protect MOSFETs

• Wide Low Side Gate Driver Supply Voltage: 10V to 20V

• Logic Input (HIN and LIN*) 3.3V Capability

• Schmitt Triggered Logic Inputs

• Undervoltage Lockout for VCC (Logic and Low Side Supply)

• Extended Temperature Range: -40°C to +125°C

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony free. "Green" Device (Note 3)

Description

The DGD2003 is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD2003’s high side to switch to 200V in a bootstrap operation.