CSD19533 Series

100-V, N channel NexFET™ power MOSFET, single TO-220, 10.5 mOhm

Catalog

100-V, N channel NexFET™ power MOSFET, single TO-220, 10.5 mOhm

Part	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Gate Charge (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Mounting Type	FET Type	Input Capacitance (Ciss) (Max)	Package / Case	Power Dissipation (Max)	Vgs (Max)	Technology	Rds On (Max)	Package Name	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)
Texas Instruments CSD19533KCS	-55 °C	175 °C	3.4 V	35 nC	6 V	10 V	Through Hole	N-Channel	2670 pF	TO-220-3	188 W	20 V	MOSFET (Metal Oxide)	10.5 mOhm	TO-220-3	100 V	100 A

Catalog

100-V, N channel NexFET™ power MOSFET, single TO-220, 10.5 mOhm

Description

This 100V, 8.7mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 100V, 8.7mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.