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MOSFET 2N-CH 20V 6.5A 8TSSOP
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Package / Case | Package / Case [custom] | Package / Case [custom] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Configuration | Power - Max [Max] | Supplier Device Package | Technology | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 15 nC | 22 mOhm | 1 V | 8-TSSOP | 0.173 " | 4.4 mm | 6.5 A | 20 V | 2 N-Channel (Dual) | 1.04 W | 8-TSSOP | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 150 °C | 950 pF | ||
Taiwan Semiconductor Corporation | 15 nC | 1 V | 8-TSSOP | 0.173 " | 4.4 mm | 6.5 A | 20 V | 2 N-Channel (Dual) | 1.04 W | 8-TSSOP | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 150 °C | 950 pF | 22 mOhm | ||
Taiwan Semiconductor Corporation | 22 mOhm | 1 V | 8-TSSOP | 0.173 " | 4.4 mm | 6.5 A | 20 V | 2 N-Channel | 1.04 W | 8-TSSOP | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 150 °C | 950 pF | 20 nC |