NGTB30N135IHR1 Series

IGBT, 1350V 30A with Monolithic Free Wheeling Diode.

Catalog

IGBT, 1350V 30A with Monolithic Free Wheeling Diode.

Part	Td (off) @ 25°C	Vce(on) (Max)	Current - Collector (Ic) (Max)	Package Name	Voltage - Collector Emitter Breakdown (Max)	Gate Charge	Current - Collector Pulsed (Icm)	Switching Energy	Switching Energy (Off)	Package / Case	Mounting Type	IGBT Type	Input Type	Power - Max	Test Condition Voltage	Test Condition Current	Test Condition Voltage (Secondary)	Test Condition Resistance	Operating Temperature (Max)	Operating Temperature (Min)
ON Semiconductor NGTB30N135IHR1WG	200 ns	3 V	60 A	TO-247-3	1350 V	220 nC	120 A	630 µJ	630 µJ	TO-247-3	Through Hole	Trench Field Stop	Standard	394 W	600 V	30 A	15 V	10 Ohm	175 °C	-40 °C

Catalog

IGBT, 1350V 30A with Monolithic Free Wheeling Diode.

Key Features

• Extremely Efficient Trench with Fieldstop Technology

• 1350 V Breakdown Voltage

• Optimized for Low Losses in IH Cooker Application

• Designed for High System Level Robustness

• These are Pb−Free Devices

Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides superiorperformance in demanding switching applications, and offers lowon−state voltage with minimal switching losses. The IGBT is wellsuited for resonant or soft switching applications.