NGTB30N135IHR1WG
ObsoleteIGBT, 1350V 30A WITH MONOLITHIC FREE WHEELING DIODE.
NGTB30N135IHR1WG
ObsoleteIGBT, 1350V 30A WITH MONOLITHIC FREE WHEELING DIODE.
Description
General part information
NGTB30N135IHR1 Series
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides superiorperformance in demanding switching applications, and offers lowon−state voltage with minimal switching losses. The IGBT is wellsuited for resonant or soft switching applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | NGTB30N135IHR1WG |
|---|---|
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 220 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3 |
| Power - Max | 394 W |
| Switching Energy | 630 µJ |
| Switching Energy (Off) | 630 µJ |
| Td (off) @ 25°C | 200 ns |
| Test Condition Current | 30 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 600 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 3 V |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
Pricing
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CAD
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