CSD25480F3 Series

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection

Part	Package / Case	Technology	Mounting Type	Current - Continuous Drain (Id) (Ta)	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Package Name	Drain to Source Voltage (Vdss)	Rds On (Max)	Gate Charge (Max)	Power Dissipation (Max)
Texas Instruments CSD25480F3T	3-XFDFN 3-XFLGA	MOSFET (Metal Oxide)	Surface Mount	1.7 A	-12 V	8 V	1.8 V	P-Channel	1.2 V	-55 °C	150 °C	155 pF	3-PICOSTAR	20 V	2.5 Ohm 132 mOhm 132 mOhm	0.91 nC	500 mW
Texas Instruments CSD25480F3	3-XFDFN 3-XFLGA	MOSFET (Metal Oxide)	Surface Mount	1.7 A	-12 V	8 V	1.8 V	P-Channel	1.2 V	-55 °C	150 °C	155 pF	3-PICOSTAR	20 V	2.5 Ohm 132 mOhm 132 mOhm	0.91 nC	500 mW

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection

Description

This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.