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DRV8962-Q1

DRV8962-Q1 Series

Automotive 70V single or dual H-bridge or quad half-bridge driver with integrated current sensing

Manufacturer: Texas Instruments

Catalog

Automotive 70V single or dual H-bridge or quad half-bridge driver with integrated current sensing

Description

AI
The DRV8962-Q1 is a wide-voltage, high-power, four-channel half-bridge driver for various automotive applications. The device supports up to 60V supply voltage, and integrated MOSFETs with 50 mΩ on-resistance allow up to 5A current on each output. The device can be used for driving up to four solenoids or valves, one stepper motor, two brushed-DC motors, one BLDC or PMSM motor and up to two thermoelectric coolers (Peltier elements). The output stage consists of N-channel power MOSFETs configured as four independent half-bridges, charge pump, current sensing and regulation circuits, current sense outputs and protection circuitry. Integrated current sensing across the high-side MOSFETs allows the device to regulate the current when the load is connected from output to ground. A regulation current limit can be set with an adjustable external voltage reference (VREF). Additionally, the device provides four proportional current output pins, one for each half-bridge high-side FET. Optional external sense resistors can also be connected from the PGND pins to the system ground. A low-power sleep mode is provided to achieve ultra- low quiescent current. Internal protection features are provided for supply undervoltage lockout, output over current, and device overtemperature. The DRV8962-Q1 is a wide-voltage, high-power, four-channel half-bridge driver for various automotive applications. The device supports up to 60V supply voltage, and integrated MOSFETs with 50 mΩ on-resistance allow up to 5A current on each output. The device can be used for driving up to four solenoids or valves, one stepper motor, two brushed-DC motors, one BLDC or PMSM motor and up to two thermoelectric coolers (Peltier elements). The output stage consists of N-channel power MOSFETs configured as four independent half-bridges, charge pump, current sensing and regulation circuits, current sense outputs and protection circuitry. Integrated current sensing across the high-side MOSFETs allows the device to regulate the current when the load is connected from output to ground. A regulation current limit can be set with an adjustable external voltage reference (VREF). Additionally, the device provides four proportional current output pins, one for each half-bridge high-side FET. Optional external sense resistors can also be connected from the PGND pins to the system ground. A low-power sleep mode is provided to achieve ultra- low quiescent current. Internal protection features are provided for supply undervoltage lockout, output over current, and device overtemperature.