CSD23280 Series
Manufacturer: Texas Instruments
Beta
⌘K
-12-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 0.7 MM, 116 MOHM, GATE ESD PROTECTION
| Part | Package / Case | Mounting Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs (Max) | Rds On (Max) | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Technology | Package Name | Power Dissipation (Max) | Current - Continuous Drain (Id) (Ta) | Gate Charge (Max) | FET Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Texas Instruments | 3-XFDFN 3-XFLGA | Surface Mount | 4.5 V | 1.5 V | -6 V | 116 mOhm | 234 pF | 950 mV | -55 °C | 150 °C | MOSFET (Metal Oxide) | 3-PICOSTAR | 500 mW | 1.8 A | 1.23 nC | P-Channel | 12 V |