BUF08630 Series
8-CH Gamma-Voltage Generator w/Adjustable Gain Vcom & 1/2 AVDD Topology
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
8-CH Gamma-Voltage Generator w/Adjustable Gain Vcom & 1/2 AVDD Topology
| Part | Voltage - Supply, Single/Dual (±) [Max] | Voltage - Supply, Single/Dual (±) [Min] | Number of Circuits | Mounting Type | Supplier Device Package | Current - Output / Channel | Slew Rate | Output Type | Current - Supply | Applications | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments BUF08630RGWT | 20 V | 9 V | 8 | Surface Mount | 20-VQFN (5x5) | 300 mA | 45 V/µs | Rail-to-Rail | 940 µA | TFT-LCD Panels: VCOM Driver | 20-VQFN Exposed Pad |
Texas Instruments BUF08630RGWR | 20 V | 9 V | 8 | Surface Mount | 20-VQFN (5x5) | 300 mA | 45 V/µs | Rail-to-Rail | 940 µA | TFT-LCD Panels: VCOM Driver | 20-VQFN Exposed Pad |
Key Features
• 10-Bit Resolution8-Channel P-Gamma1-Channel P-VCOMHigh Slew Rate VCOM: 45 V/µs16x Rewritable Nonvolatile MemoryTwo Independent Pin-Selectable Memory BanksRail-to-Rail Output:300 mV Min Swing-to-Rail (10 mA)> 300 mA Max IOUTLow Supply CurrentSupply Voltage: 9 V to 20 VDigital Supply: 2 V to 5.5 VTwo-Wire Interface:Supports 400 kHz and 3.4 MHz1/2 AVDD CapabilityAPPLICATIONSTFT-LCD Reference DriversAll other trademarks are the property of their respective owners10-Bit Resolution8-Channel P-Gamma1-Channel P-VCOMHigh Slew Rate VCOM: 45 V/µs16x Rewritable Nonvolatile MemoryTwo Independent Pin-Selectable Memory BanksRail-to-Rail Output:300 mV Min Swing-to-Rail (10 mA)> 300 mA Max IOUTLow Supply CurrentSupply Voltage: 9 V to 20 VDigital Supply: 2 V to 5.5 VTwo-Wire Interface:Supports 400 kHz and 3.4 MHz1/2 AVDD CapabilityAPPLICATIONSTFT-LCD Reference DriversAll other trademarks are the property of their respective owners
Description
AI
The BUF08630 offers eight programmable gamma channels and one programmable VCOMchannel.
The final gamma and VCOMvalues can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the BUF08630 supports up to 16 write operations to the on-chip memory.
The BUF08630 has two separate memory banks, allowing simultaneous storage of two different gamma curves to facilitate switching between gamma curves.
All gamma and VCOMchannels offer a rail-to-rail output that typically swings to within 150 mV of either supply rail with a 10-mA load. All channels are programmed using a two-wire interface that supports standard operations up to 400 kHz, and high-speed data transfers up to 3.4 MHz.
The BUF08630 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20V. The BUF08630 is available in a 20-pin QFN package, and is specified from –40°C to +95°C.
The BUF08630 offers eight programmable gamma channels and one programmable VCOMchannel.
The final gamma and VCOMvalues can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the BUF08630 supports up to 16 write operations to the on-chip memory.
The BUF08630 has two separate memory banks, allowing simultaneous storage of two different gamma curves to facilitate switching between gamma curves.
All gamma and VCOMchannels offer a rail-to-rail output that typically swings to within 150 mV of either supply rail with a 10-mA load. All channels are programmed using a two-wire interface that supports standard operations up to 400 kHz, and high-speed data transfers up to 3.4 MHz.
The BUF08630 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20V. The BUF08630 is available in a 20-pin QFN package, and is specified from –40°C to +95°C.