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TLV2322 Series

Dual, 8-V, 85-kHz operational amplifier

Manufacturer: Texas Instruments

Catalog(4 parts)

PartPackage / CaseAmplifier TypeOperating TemperatureOperating TemperatureCurrent - Input BiasNumber of CircuitsVoltage - Input OffsetVoltage - Supply Span (Max)Current - Output / ChannelVoltage - Supply Span (Min)Mounting TypeSupplier Device PackageSlew RateCurrent - SupplyPackage / CasePackage / Case
Texas Instruments
TLV2322IPWR
CMOS Amplifier 2 Circuit 8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
CMOS
85 °C
-40 °C
5.99999975918475e-13 A
2 ul
0.0010999999940395355 V
8 V
0.029999999329447743 A
2 V
Surface Mount
8-TSSOP
30000 V/s
0.000019999999494757503 A
Texas Instruments
TLV2322ID
CMOS Amplifier 2 Circuit 8-SOIC
8-SOIC
CMOS
85 °C
-40 °C
5.99999975918475e-13 A
2 ul
0.0010999999940395355 V
8 V
0.029999999329447743 A
2 V
Surface Mount
8-SOIC
30000 V/s
0.000019999999494757503 A
0.003899999894201755 m
Texas Instruments
TLV2322IP
CMOS Amplifier 2 Circuit 8-PDIP
8-DIP
CMOS
85 °C
-40 °C
5.99999975918475e-13 A
2 ul
0.0010999999940395355 V
8 V
0.029999999329447743 A
2 V
Through Hole
8-PDIP
30000 V/s
0.000019999999494757503 A
0.007619999814778566 m
0.007619999814778566 m
Texas Instruments
TLV2322IPW
CMOS Amplifier 2 Circuit 8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
CMOS
85 °C
-40 °C
5.99999975918475e-13 A
2 ul
0.0010999999940395355 V
8 V
0.029999999329447743 A
2 V
Surface Mount
8-TSSOP
30000 V/s
0.000019999999494757503 A

Key Features

Wide Range of Supply Voltages Over Specified Temperature Range:TA= -40°C to 85°C...2 V to 8 VFully Characterized at 3 V and 5 VSingle-Supply OperationCommon-Mode Input Voltage RangeExtends Below the Negative Rail and up toVDD-1 V at TA= 25°COutput Voltage Range Includes Negative RailHigh Input Impedance...1012TypicalESD-Protection CircuitryDesigned-In Latch-Up ImmunityLinCMOS is a trademark of Texas Instruments Incorporated.Wide Range of Supply Voltages Over Specified Temperature Range:TA= -40°C to 85°C...2 V to 8 VFully Characterized at 3 V and 5 VSingle-Supply OperationCommon-Mode Input Voltage RangeExtends Below the Negative Rail and up toVDD-1 V at TA= 25°COutput Voltage Range Includes Negative RailHigh Input Impedance...1012TypicalESD-Protection CircuitryDesigned-In Latch-Up ImmunityLinCMOS is a trademark of Texas Instruments Incorporated.

Description

AI
The TLV232x operational amplifiers are in a family of devices that has been specifically designed for use in low-voltage single-supply applications. This amplifier is especially well suited to ultra-low-power systems that require devices to consume the absolute minimum of supply currents. Each amplifier is fully functional down to a minimum supply voltage of 2 V, is fully characterized, tested, and specified at both 3-V and 5-V power supplies. The common-mode input voltage range includes the negative rail and extends to within 1 V of the positive rail. These amplifiers are specifically targeted for use in very low-power, portable, battery-driven applications with the maximum supply current per operational amplifier specified at only 27 uA over its full temperature range of -40°C to 85°C. Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOS technology. The LinCMOS process also features extremely high input impedance and ultra-low bias currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter applications. To facilitate the design of small portable equipment, the TLV232x is made available in a wide range of package options, including the small-outline and thin-shrink small-outline packages (TSSOP). The TSSOP package has significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only 1.1 mm makes it particularly attractive when space is critical. The device inputs and outputs are designed to withstand -100-mA currents without sustaining latch-up. The TLV232x incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD can result in the degradation of the device parametric performance. The TLV232x operational amplifiers are in a family of devices that has been specifically designed for use in low-voltage single-supply applications. This amplifier is especially well suited to ultra-low-power systems that require devices to consume the absolute minimum of supply currents. Each amplifier is fully functional down to a minimum supply voltage of 2 V, is fully characterized, tested, and specified at both 3-V and 5-V power supplies. The common-mode input voltage range includes the negative rail and extends to within 1 V of the positive rail. These amplifiers are specifically targeted for use in very low-power, portable, battery-driven applications with the maximum supply current per operational amplifier specified at only 27 uA over its full temperature range of -40°C to 85°C. Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOS technology. The LinCMOS process also features extremely high input impedance and ultra-low bias currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter applications. To facilitate the design of small portable equipment, the TLV232x is made available in a wide range of package options, including the small-outline and thin-shrink small-outline packages (TSSOP). The TSSOP package has significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only 1.1 mm makes it particularly attractive when space is critical. The device inputs and outputs are designed to withstand -100-mA currents without sustaining latch-up. The TLV232x incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD can result in the degradation of the device parametric performance.