CSD16415 Series

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm

Part	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	Gate Charge (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Input Capacitance (Ciss) (Max)	Mounting Type	Package / Case	Current - Continuous Drain (Id) (Ta)	Technology	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Package Name	Package Width	Package Length	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)
Texas Instruments CSD16415Q5T	-55 °C	150 °C	25 V	1.15 mOhm	29 nC	-12 V	16 V	4100 pF	Surface Mount	8-PowerTDFN	100 A	MOSFET (Metal Oxide)	N-Channel	10 V	4.5 V	3.2 W	8-VSON-CLIP	6 mm	5 mm	1.9 V
Texas Instruments CSD16415Q5	-55 °C	150 °C	25 V	1.15 mOhm	29 nC	-12 V	16 V	4100 pF	Surface Mount	8-PowerTDFN		MOSFET (Metal Oxide)	N-Channel	10 V	4.5 V	3.2 W	8-VSON-CLIP	6 mm	5 mm	1.9 V	100 A

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm

Description

This 25 V, 1.3 mΩ, 5 × 6 mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. This 25 V, 1.3 mΩ, 5 × 6 mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.