DMP3008SFGQ Series

NRND = Not Recommended for New Design

Catalog

NRND = Not Recommended for New Design

Part	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Grade	Qualification	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs(th) (Max) @ Id
Diodes Inc DMP3008SFGQ-7	30 V	8-PowerVDFN	P-Channel	Surface Mount	4.5 V 10 V	8.6 A	Automotive	AEC-Q101	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	2230 pF	17 mOhm	900 mW	POWERDI3333-8	2.1 V
Diodes Inc DMP3008SFG-13	30 V	8-PowerVDFN	P-Channel	Surface Mount	4.5 V 10 V	8.6 A			MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	2230 pF	17 mOhm	900 mW	POWERDI3333-8	2.1 V

Catalog

NRND = Not Recommended for New Design

Key Features

• Low RDS(ON)– ensures on-state losses are minimized

• Small form factor thermally efficient package enables higher density end products

• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product

Description

This new generation 30V P Channel enhancement mode MOSFET has been designed to minimise RDS(on)and yet maintain superior switching performance. This device is ideally use Notebook battery power management and Loadswitch.