DMTH4M70SPGWQ Series

40V +175°C N-Channel Enhancement Mode MOSFET PowerDI8080-5

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET PowerDI8080-5

Part	Power Dissipation (Max)	Grade	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
Diodes Inc DMTH4M70SPGWQ-13	5.6 W 428 W	Automotive	Surface Mount	40 V	20 V	-55 °C	175 ░C	PowerDI8080-5	460 A	MOSFET (Metal Oxide)	SOT-1235	N-Channel	10 V	0.7 mOhm	AEC-Q101	10053 pF	117.1 nC	4 V

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET PowerDI8080-5

Key Features

• Rated to +175°C – Ideal for High Ambient TemperatureEnvironments

• 100% Unclamped Inductive Switching (UIS) Test in Production—Ensures More Reliable and Robust End Application

• High Conversion Efficiency

• Low RDS(ON)—Minimizes Power Losses

• Wettable Flank for Improved Optical Inspection

• Fast Switching Speed

• Low Input Capacitance

• Lead-Free Finish; RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• The DMTH4M70SPGWQ is suitable for automotive applicationsrequiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in IATF 16949certified facilities.https://www.diodes.com/quality/product-definitions/