DMTH4M70SPGWQ-13

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Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI8080-5

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Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI8080-5

Technical Specifications

Parameters and characteristics for this part

Specification	DMTH4M70SPGWQ-13

Current - Continuous Drain (Id) @ 25°C	460 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	117.1 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	10053 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1235
Power Dissipation (Max)	428 W, 5.6 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	0.7 mOhm
Supplier Device Package	PowerDI8080-5
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

40V +175°C N-Channel Enhancement Mode MOSFET PowerDI8080-5

Part	Power Dissipation (Max)	Grade	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
Diodes Inc DMTH4M70SPGWQ-13	5.6 W 428 W	Automotive	Surface Mount	40 V	20 V	-55 °C	175 ░C	PowerDI8080-5	460 A	MOSFET (Metal Oxide)	SOT-1235	N-Channel	10 V	0.7 mOhm	AEC-Q101	10053 pF	117.1 nC	4 V

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General part information

40V +175°C N-Channel Enhancement Mode MOSFET PowerDI8080-5

Technical documentation and resources