CSD25481F4 Series

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection

Part	Package / Case	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Package Name	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Gate Charge (Max)	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Rds On (Max)	FET Type
Texas Instruments CSD25481F4T	3-XFDFN	2.5 A	189 pF	3-PICOSTAR	Surface Mount	20 V	MOSFET (Metal Oxide)	500 mW	0.91 nC	1.2 V	4.5 V	1.8 V	-55 °C	150 °C	-12 V	88 mOhm	P-Channel
Texas Instruments CSD25481F4	3-XFDFN	2.5 A	189 pF	3-PICOSTAR	Surface Mount	20 V	MOSFET (Metal Oxide)	500 mW	0.913 nC	1.2 V	4.5 V	1.8 V	-55 °C	150 °C	-12 V	88 mOhm	P-Channel

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection

Description

This 90-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . This 90-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . .