CSD25211W1015 Series

-20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 33 mOhm, gate ESD protection

Catalog

-20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 33 mOhm, gate ESD protection

Part	Mounting Type	Gate Charge (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Package Name	Package Width	Package Length	Drain to Source Voltage (Vdss)	Rds On (Max)	Current - Continuous Drain (Id) (Ta)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Vgs(th) (Max)	Package / Case	FET Type
Texas Instruments CSD25211W1015	Surface Mount	4.1 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	1 W	6-DSBGA	1.5 mm	1 mm	20 V	33 mOhm	3.2 A	-6 V	570 pF	2.5 V	4.5 V	1.1 V	6-UFBGA DSBGA	P-Channel

Catalog

-20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 33 mOhm, gate ESD protection

Description

The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.