UCC21710 Series
Automotive 5.7kVrms 10A single-channel isolated gate driver with overcurrent protection for IGBT/SiC
Manufacturer: Texas Instruments
Catalog(2 parts)
| Part | Approval Agency | Technology | Supplier Device Package | Voltage - Isolation▲▼ | Rise / Fall Time (Typ)▲▼ | Number of Channels▲▼ | Propagation Delay tpLH / tpHL (Max)▲▼ | Current - Peak Output▲▼ | Operating Temperature▲▼ | Operating Temperature▲▼ | Voltage - Output Supply▲▼ | Voltage - Output Supply▲▼ | Common Mode Transient Immunity (Min)▲▼ | Mounting Type | Pulse Width Distortion (Max)▲▼ | Current - Output High, Low▲▼ | Current - Output High, Low▲▼ | Package / Case | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
UL, VDE | Capacitive Coupling | 16-SOIC | 5700 Vrms | 2.7000000457633178e-8 s, 3.2999999177718564e-8 s | 1 ul | 1.300000036508209e-7 s | 10 A | 125 °C | -40 °C | 33 V | 13 V | 149999992832 V/s | Surface Mount | 2.999999892949745e-8 s | 10 A | 10 A | 16-SOIC | |||
UL, VDE | Capacitive Coupling | 16-SOIC | 5700 Vrms | 2.7000000457633178e-8 s, 3.2999999177718564e-8 s | 1 ul | 1.300000036508209e-7 s | 10 A | 125 °C | -40 °C | 33 V | 13 V | 149999992832 V/s | Surface Mount | 2.999999892949745e-8 s | 10 A | 10 A | 16-SOIC | Automotive | AEC-Q100 |
Key Features
• 5.7kVRMS single channel isolated gate driverAEC-Q100 qualified for automotive applicationsDevice temperature grade 1: -40°C to +125°C ambient operating temperature rangeSiC MOSFETs and IGBTs up to 2121Vpk33V maximum output drive voltage (VDD-VEE)±10A drive strength and split output150V/ns minimum CMTI270ns response time fast overcurrent protection4A internal active miller clamp400mA soft turn-off when fault happensIsolated analog sensor with PWM output forTemperature sensing with NTC, PTC or thermal diodeHigh voltage DC-Link or phase voltageAlarm FLT on over current and reset from RST/ENFast enable/disable response on RST/ENReject <40ns noise transient and pulse on input pins12V VDD UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage Immunity up to 5V130ns (maximum) propagation delay and 30ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8mmOperating junction temperature –40°C to 150°CSafety-related certifications:Reinforced insulation per DIN EN IEC 60747-17(VDE 0884-17)UL 1577 component recognition program5.7kVRMS single channel isolated gate driverAEC-Q100 qualified for automotive applicationsDevice temperature grade 1: -40°C to +125°C ambient operating temperature rangeSiC MOSFETs and IGBTs up to 2121Vpk33V maximum output drive voltage (VDD-VEE)±10A drive strength and split output150V/ns minimum CMTI270ns response time fast overcurrent protection4A internal active miller clamp400mA soft turn-off when fault happensIsolated analog sensor with PWM output forTemperature sensing with NTC, PTC or thermal diodeHigh voltage DC-Link or phase voltageAlarm FLT on over current and reset from RST/ENFast enable/disable response on RST/ENReject <40ns noise transient and pulse on input pins12V VDD UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage Immunity up to 5V130ns (maximum) propagation delay and 30ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8mmOperating junction temperature –40°C to 150°CSafety-related certifications:Reinforced insulation per DIN EN IEC 60747-17(VDE 0884-17)UL 1577 component recognition program
Description
AI
The UCC21710-Q1 is a galvanic isolated single channel gate driver designed for up to 1700-V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance and robustness. UCC21710-Q1 has up to ±10A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).
The UCC21710-Q1 includes the state-of-the-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.
The UCC21710-Q1 is a galvanic isolated single channel gate driver designed for up to 1700-V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance and robustness. UCC21710-Q1 has up to ±10A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).
The UCC21710-Q1 includes the state-of-the-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.