74CBT3257 Series

5-V, 2:1 (SPDT), 4-channel FET bus switch with –2-V undershoot protection

Catalog

5-V, 2:1 (SPDT), 4-channel FET bus switch with –2-V undershoot protection

Part	Voltage Supply Source	Independent Circuits	Operating Temperature (Min)	Operating Temperature (Max)	Package Length	Package Name	Package Width	Type	Mounting Type	Circuit	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Package / Case
Texas Instruments SN74CBT3257CPWRG4	Single Supply	1	-40 °C	85 °C	0.173 in	16-TSSOP	4.4 mm	Multiplexer/Demultiplexer	Surface Mount	4 x 2:1	5.5 V	4.5 V
Texas Instruments SN74CBT3257DBQRE4	Single Supply	1	-40 °C	85 °C	0.154 in	16-SSOP	3.9 mm	Multiplexer/Demultiplexer	Surface Mount	4 x 2:1	5.5 V	4.5 V
Texas Instruments SN74CBT3257CDRG4	Single Supply	1	-40 °C	85 °C	0.154 in	16-SOIC	3.9 mm	Multiplexer/Demultiplexer	Surface Mount	4 x 2:1	5.5 V	4.5 V
Texas Instruments SN74CBT3257CD	Single Supply	1	-40 °C	85 °C	0.154 in	16-SOIC	3.9 mm	Multiplexer/Demultiplexer	Surface Mount	4 x 2:1	5.5 V	4.5 V
Texas Instruments SN74CBT3257RGYRG4	Single Supply	1	-40 °C	85 °C	4 mm	16-VQFN	3.5 mm	Multiplexer/Demultiplexer	Surface Mount	4 x 2:1	5.5 V	4.5 V	16-VFQFN Exposed Pad
Texas Instruments SN74CBT3257D	Single Supply	1	-40 °C	85 °C	0.154 in	16-SOIC	3.9 mm	Multiplexer/Demultiplexer	Surface Mount	4 x 2:1	5.5 V	4.5 V
Texas Instruments SN74CBT3257DBR	Single Supply	1	-40 °C	85 °C	0.209 in	16-SSOP	5.3 mm	Multiplexer/Demultiplexer	Surface Mount	4 x 2:1	5.5 V	4.5 V
Texas Instruments SN74CBT3257CRGYR	Single Supply	1	-40 °C	85 °C	4 mm	16-VQFN	3.5 mm	Multiplexer/Demultiplexer	Surface Mount	4 x 2:1	5.5 V	4.5 V	16-VFQFN Exposed Pad
Texas Instruments SN74CBT3257CDR	Single Supply	1	-40 °C	85 °C	0.154 in	16-SOIC	3.9 mm	Multiplexer/Demultiplexer	Surface Mount	4 x 2:1	5.5 V	4.5 V
Texas Instruments SN74CBT3257CPW	Single Supply	1	-40 °C	85 °C	0.173 in	16-TSSOP	4.4 mm	Multiplexer/Demultiplexer	Surface Mount	4 x 2:1	5.5 V	4.5 V

Catalog

5-V, 2:1 (SPDT), 4-channel FET bus switch with –2-V undershoot protection

Description

The SN74CBT3257C is a high-speed TTL-compatible FET multiplexer/demultiplexer with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3257C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The SN74CBT3257C is a 4-bit 1-of-2 multiplexer/demultiplexer with a single output-enable (OE\) input. The select (S) input controls the data path of the multiplexer/demultiplexer. When OE\ is low, the multiplexer/demultiplexer is enabled and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the multiplexer/demultiplexer is disabled and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, OE\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. The SN74CBT3257C is a high-speed TTL-compatible FET multiplexer/demultiplexer with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3257C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The SN74CBT3257C is a 4-bit 1-of-2 multiplexer/demultiplexer with a single output-enable (OE\) input. The select (S) input controls the data path of the multiplexer/demultiplexer. When OE\ is low, the multiplexer/demultiplexer is enabled and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the multiplexer/demultiplexer is disabled and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, OE\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.