UCC21750 Series
5.7kVrms ±10A, single-channel isolated gate driver w/ DESAT & internal miller clamp for IGBT/SiCFETs
Manufacturer: Texas Instruments
Catalog(3 parts)
| Part | Supplied Contents | Type | Secondary Attributes | Utilized IC / Part | Function | Propagation Delay tpLH / tpHL (Max)▲▼ | Rise / Fall Time (Typ)▲▼ | Approval Agency | Supplier Device Package | Number of Channels▲▼ | Mounting Type | Voltage - Output Supply▲▼ | Voltage - Output Supply▲▼ | Qualification | Voltage - Isolation▲▼ | Operating Temperature▲▼ | Operating Temperature▲▼ | Pulse Width Distortion (Max)▲▼ | Common Mode Transient Immunity (Min)▲▼ | Grade | Current - Peak Output▲▼ | Technology | Package / Case | Current - Output High, Low▲▼ | Current - Output High, Low▲▼ |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Board(s) | Power Management | On-Board LEDs | UCC21750 | Gate Driver | |||||||||||||||||||||
1.300000036508209e-7 s | 2.7000000457633178e-8 s, 3.2999999177718564e-8 s | CQC, CSA, TUV, UL, VDE | 16-SOIC | 1 ul | Surface Mount | 33 V | 13 V | AEC-Q100 | 5700 Vrms | 125 °C | -40 °C | 2.999999892949745e-8 s | 149999992832 V/s | Automotive | 10 A | Capacitive Coupling | 16-SOIC | ||||||||
1.300000036508209e-7 s | 2.7000000457633178e-8 s, 3.2999999177718564e-8 s | UL, VDE | 16-SOIC | 1 ul | Surface Mount | 33 V | 13 V | 5700 Vrms | 125 °C | -40 °C | 2.999999892949745e-8 s | 149999992832 V/s | 10 A | Capacitive Coupling | 16-SOIC | 10 A | 10 A |
Key Features
• 5.7-kVRMSsingle channel isolated gate driverSiC MOSFETs and IGBTs up to 2121Vpk33-V maximum output drive voltage (VDD – VEE)±10-A drive strength and split output150-V/ns minimum CMTI200-ns response time fast DESAT protection4-A Internal active miller clamp400-mA soft turn-off when fault happensIsolated analog sensor with PWM output forTemperature sensing with NTC, PTC or thermal diodeHigh voltage DC-link or phase voltageAlarmFLTon overcurrent and reset fromRST/ENFast enable and disable response onRST/ENReject < 40-ns noise transient and pulse on input pins12-V VDD UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage immunity up to 5 V130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8 mmOperating junction temperature –40°C to 150°CSafety-related certifications:Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)UL 1577 component recognition program5.7-kVRMSsingle channel isolated gate driverSiC MOSFETs and IGBTs up to 2121Vpk33-V maximum output drive voltage (VDD – VEE)±10-A drive strength and split output150-V/ns minimum CMTI200-ns response time fast DESAT protection4-A Internal active miller clamp400-mA soft turn-off when fault happensIsolated analog sensor with PWM output forTemperature sensing with NTC, PTC or thermal diodeHigh voltage DC-link or phase voltageAlarmFLTon overcurrent and reset fromRST/ENFast enable and disable response onRST/ENReject < 40-ns noise transient and pulse on input pins12-V VDD UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage immunity up to 5 V130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8 mmOperating junction temperature –40°C to 150°CSafety-related certifications:Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)UL 1577 component recognition program
Description
AI
The UCC21750 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21750 has up to ±10-A peak source and sink current.
The input side is isolated from the output side with SiO2capacitive isolation technology, supporting up to 1.5-kVRMSworking voltage, 12.8-kVPKsurge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and > 150-V/ns common mode noise immunity (CMTI).
The UCC21750 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.
The UCC21750 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21750 has up to ±10-A peak source and sink current.
The input side is isolated from the output side with SiO2capacitive isolation technology, supporting up to 1.5-kVRMSworking voltage, 12.8-kVPKsurge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and > 150-V/ns common mode noise immunity (CMTI).
The UCC21750 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.