MOSFET N-CH 80V 150A TO263
| Part | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Technology | FET Type | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Package / Case | Supplier Device Package | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix SUM60020E-GE3 | 4 V | 375 W | 80 V | 227 nC | 10680 pF | 150 A | 20 V | MOSFET (Metal Oxide) | N-Channel | Surface Mount | 10 V | 7.5 V | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | TO-263 (D2PAK) | 2.1 mOhm | -55 °C | 175 ░C |