SUM60020E-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 80V 150A TO263

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 80V 150A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM60020E-GE3

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	227 nC
Input Capacitance (Ciss) (Max) @ Vds	10680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	2.1 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SUM60020E-GE3	4 V	375 W	80 V	227 nC	10680 pF	150 A	20 V	MOSFET (Metal Oxide)	N-Channel	Surface Mount	10 V	7.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	2.1 mOhm	-55 °C	175 ░C

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General part information

N-Channel 80 V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources