MOSFET N-CH 80V 150A TO263
| Part | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Technology | FET Type | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Package / Case | Supplier Device Package | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division  | 4 V  | 375 W  | 80 V  | 227 nC  | 10680 pF  | 150 A  | 20 V  | MOSFET (Metal Oxide)  | N-Channel  | Surface Mount  | 10 V  | 7.5 V  | D2PAK (2 Leads + Tab)  TO-263-3  TO-263AB  | TO-263 (D2PAK)  | 2.1 mOhm  | -55 °C  | 175 ░C  |