CSD23381 Series

Catalog

-12-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 1 MM, 175 MOHM, GATE ESD PROTECTION

Part	Technology	Rds On (Max)	FET Type	Vgs(th) (Max)	Power Dissipation (Max)	Package / Case	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)
Texas Instruments CSD23381F4T	MOSFET (Metal Oxide)	175 mOhm	P-Channel	1.2 V	500 mW	3-XFDFN	1.14 nC	12 V	3-PICOSTAR	4.5 V	1.8 V	236 pF	-8 V	Surface Mount	-55 °C	150 °C	2.3 A
Texas Instruments CSD23381F4	MOSFET (Metal Oxide)	175 mOhm	P-Channel	1.2 V	500 mW	3-XFDFN	1.14 nC	12 V	3-PICOSTAR	4.5 V	1.8 V	236 pF	-8 V	Surface Mount	-55 °C	150 °C	2.3 A