MOSFET 2N-CH 20V 7.6A 8SOIC
| Part | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Configuration | Operating Temperature [Min] | Operating Temperature [Max] | Power - Max [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Mounting Type | FET Feature | Technology | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc.  | 1.1 V  | 23 mOhm  | 630 pF  | 2 N-Channel (Dual)  | -55 °C  | 150 °C  | 2 W  | 7.6 A  | 8-SOIC  | Surface Mount  | Logic Level Gate  | MOSFET (Metal Oxide)  | 12.5 nC  | 8-SOIC  | 3.9 mm  | 0.154 in  | 20 V  | 
Alpha & Omega Semiconductor Inc.  | 1.1 V  | 23 mOhm  | 630 pF  | 2 N-Channel (Dual)  | -55 °C  | 150 °C  | 2 W  | 7.6 A  | 8-SOIC  | Surface Mount  | Logic Level Gate  | MOSFET (Metal Oxide)  | 12.5 nC  | 8-SOIC  | 3.9 mm  | 0.154 in  | 20 V  |