AO9926B

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Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7.6A 8SOIC

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Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7.6A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	AO9926B

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	7.6 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	12.5 nC
Input Capacitance (Ciss) (Max) @ Vds	630 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs [Max]	23 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.1 V

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	FET Feature	Technology	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)
Alpha & Omega Semiconductor Inc. AO9926C	1.1 V	23 mOhm	630 pF	2 N-Channel (Dual)	-55 °C	150 °C	2 W	7.6 A	8-SOIC	Surface Mount	Logic Level Gate	MOSFET (Metal Oxide)	12.5 nC	8-SOIC	3.9 mm	0.154 in	20 V
Alpha & Omega Semiconductor Inc. AO9926B	1.1 V	23 mOhm	630 pF	2 N-Channel (Dual)	-55 °C	150 °C	2 W	7.6 A	8-SOIC	Surface Mount	Logic Level Gate	MOSFET (Metal Oxide)	12.5 nC	8-SOIC	3.9 mm	0.154 in	20 V

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