CSD19534 Series

100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm

Catalog

100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm

Part	Vgs (Max)	Package Width	Package Name	Package Length	Package / Case	Gate Charge (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Rds On (Max)	Vgs(th) (Max)	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)
Texas Instruments CSD19534Q5AT	20 V	6 mm	8-VSONP	5 mm	8-PowerTDFN	22 nC	N-Channel	-55 °C	150 °C	1680 pF	3.2 W 63 W	15.1 mOhm	3.4 V	MOSFET (Metal Oxide)	100 V	44 A	Surface Mount	6 V	10 V

Catalog

100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm

Description

This 100 V, 12.6 mΩ, SON 5 mm × 6mm NexFET power MOSFET is designed to minimize losses in power conversion applications. This 100 V, 12.6 mΩ, SON 5 mm × 6mm NexFET power MOSFET is designed to minimize losses in power conversion applications.