MOSFET N-CH 100V 150A TO263-7
| Part | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Supplier Device Package | FET Type | Vgs (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Technology | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix SUM70030M-GE3 | 4 V | 375 W | Surface Mount | 3.5 mOhm | 100 V | TO-263-7 | N-Channel | 20 V | D2PAK, TO-263-7 | 214 nC | MOSFET (Metal Oxide) | 150 A | -55 °C | 175 ░C | ||
Vishay Siliconix SUM70030E-GE3 | 4 V | 375 W | Surface Mount | 2.88 mOhm | 100 V | TO-263 (D2PAK) | N-Channel | 20 V | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | 214 nC | MOSFET (Metal Oxide) | 150 A | -55 °C | 175 ░C | 10 V | 7.5 V |