SUM70030M-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 150A TO263-7

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 150A TO263-7

Technical Specifications

Parameters and characteristics for this part

Specification	SUM70030M-GE3

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	214 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	TO-263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max) [Max]	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SUM70030E-GE3	10 V	7.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	214 nC	TO-263 (D2PAK)	N-Channel	150 A	2.88 mOhm	4 V	Surface Mount	375 W	20 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	100 V
Vishay General Semiconductor - Diodes Division SUM70030M-GE3			D2PAK TO-263-7	214 nC	TO-263-7	N-Channel	150 A	3.5 mOhm	4 V	Surface Mount	375 W	20 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	100 V

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General part information

N-Channel 100 V 150A (Tc) 375W (Tc) Surface Mount TO-263-7

Technical documentation and resources