SUM70030E-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET, N-CH, 100V, 150A, TO-263 ROHS COMPLIANT: YES

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Active

Vishay General Semiconductor - Diodes Division

MOSFET, N-CH, 100V, 150A, TO-263 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	SUM70030E-GE3

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	214 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	2.88 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max) [Max]	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SUM70030E-GE3	10 V	7.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	214 nC	TO-263 (D2PAK)	N-Channel	150 A	2.88 mOhm	4 V	Surface Mount	375 W	20 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	100 V
Vishay General Semiconductor - Diodes Division SUM70030M-GE3			D2PAK TO-263-7	214 nC	TO-263-7	N-Channel	150 A	3.5 mOhm	4 V	Surface Mount	375 W	20 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources