CSD15380F3 Series
20-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 1460 mOhm, gate ESD protection
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
20-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 1460 mOhm, gate ESD protection
| Part | Mounting Type | Rds On (Max) @ Id, Vgs | Package / Case | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] | Vgs (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | FET Type | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD15380F3T | Surface Mount | 1190 mOhm | 3-XFDFN | 3-PICOSTAR | 500 mA | MOSFET (Metal Oxide) | 10.5 pF | 500 mW | 10 V | 150 °C | -55 °C | 2.5 V, 8 V | 20 V | 0.281 nC | N-Channel | 1.35 V |
Texas Instruments CSD15380F3 | Surface Mount | 1190 mOhm | 3-XFDFN | 3-PICOSTAR | 500 mA | MOSFET (Metal Oxide) | 10.5 pF | 500 mW | 10 V | 150 °C | -55 °C | 2.8 V, 8 V | 20 V | 0.281 nC | N-Channel | 1.35 V |
Key Features
• Ultra-low CiSSand COSSUltra-low Qgand QgdUltra-small footprint0.73 mm × 0.64 mmUltra-low profile0.36-mm max heightIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliantUltra-low CiSSand COSSUltra-low Qgand QgdUltra-small footprint0.73 mm × 0.64 mmUltra-low profile0.36-mm max heightIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliant
Description
AI
This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.