CSD15380 Series

20-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 1460 mOhm, gate ESD protection

Catalog

20-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 1460 mOhm, gate ESD protection

Part	Package / Case	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	FET Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	Rds On (Max)	Technology	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Vgs(th) (Max)	Package Name	Vgs (Max)
Texas Instruments CSD15380F3T	3-XFDFN 3-XFLGA	10.5 pF	0.281 nC	N-Channel	2.5 V	8 V	20 V	500 mA	1190 mOhm	MOSFET (Metal Oxide)	500 mW	-55 °C	150 °C	Surface Mount	1.35 V	3-PICOSTAR	10 V

Catalog

20-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 1460 mOhm, gate ESD protection

Description

This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.