CSD17501Q5A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm

Part	Gate Charge (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Package Width	Package Name	Package Length	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Power Dissipation (Max)	Rds On (Max)
Texas Instruments CSD17501Q5A	17 nC 17 nC	8-PowerTDFN	-55 °C	150 °C	2630 pF	1.8 V	MOSFET (Metal Oxide)	10 V	4.5 V	100 A	20 V	6 mm	8-VSONP	5 mm	30 V	Surface Mount	N-Channel	3.2 W	2.9 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm

Description

The NexFET power MOSFET has been designed to minimize losses in power conversion applications. The NexFET power MOSFET has been designed to minimize losses in power conversion applications.