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47L16 Series

16Kb 2.7-3.6V I2C Serial EERAM - SRAM with EEPROM Back Up

Manufacturer: Microchip Technology

Catalog

16Kb 2.7-3.6V I2C Serial EERAM - SRAM with EEPROM Back Up

PartAccess TimeWrite Cycle Time - Word, PageMounting TypeTechnologyVoltage - Supply [Max]Voltage - Supply [Min]Memory InterfaceOperating Temperature [Max]Operating Temperature [Min]Memory FormatMemory OrganizationPackage / CaseMemory TypeMemory SizeSupplier Device PackagePackage / CasePackage / Case
Microchip Technology
47C16-I/S16K
400 ns
1 ms
Surface Mount
EEPROM, SRAM
5.5 V
4.5 V
I2C
85 °C
-40 °C
EERAM
2K x 8
Die
Non-Volatile
2 KB
Die
Microchip Technology
47L16-I/SN
400 ns
1 ms
Surface Mount
EEPROM, SRAM
3.6 V
2.7 V
I2C
85 °C
-40 °C
EERAM
2K x 8
8-SOIC
Non-Volatile
2 KB
8-SOIC
3.9 mm
Microchip Technology
47L16-I/P
400 ns
1 ms
Through Hole
EEPROM, SRAM
3.6 V
2.7 V
I2C
85 °C
-40 °C
EERAM
2K x 8
8-DIP
Non-Volatile
2 KB
8-PDIP
0.3 in
7.62 mm
Microchip Technology
47L16-E/SN
400 ns
1 ms
Surface Mount
EEPROM, SRAM
3.6 V
2.7 V
I2C
125 °C
-40 °C
EERAM
2K x 8
8-SOIC
Non-Volatile
2 KB
8-SOIC
3.9 mm
Microchip Technology
47L16-E/ST
400 ns
1 ms
Surface Mount
EEPROM, SRAM
3.6 V
2.7 V
I2C
125 °C
-40 °C
EERAM
2K x 8
8-TSSOP (0.173", 4.40mm Width)
Non-Volatile
2 KB
8-TSSOP
Microchip Technology
47L16-E/P
400 ns
1 ms
Through Hole
EEPROM, SRAM
3.6 V
2.7 V
I2C
125 °C
-40 °C
EERAM
2K x 8
8-DIP
Non-Volatile
2 KB
8-PDIP
0.3 in
7.62 mm
Microchip Technology
47L16-I/W16K
400 ns
1 ms
Surface Mount
EEPROM, SRAM
3.6 V
2.7 V
I2C
85 °C
-40 °C
EERAM
2K x 8
Die
Non-Volatile
2 KB
Die
Microchip Technology
47L16T-E/SN
400 ns
1 ms
Surface Mount
EEPROM, SRAM
3.6 V
2.7 V
I2C
125 °C
-40 °C
EERAM
2K x 8
8-SOIC
Non-Volatile
2 KB
8-SOIC
3.9 mm
Microchip Technology
47L16T-I/ST
400 ns
1 ms
Surface Mount
EEPROM, SRAM
3.6 V
2.7 V
I2C
85 °C
-40 °C
EERAM
2K x 8
8-TSSOP (0.173", 4.40mm Width)
Non-Volatile
2 KB
8-TSSOP
Microchip Technology
47L16T-I/SN
400 ns
1 ms
Surface Mount
EEPROM, SRAM
3.6 V
2.7 V
I2C
85 °C
-40 °C
EERAM
2K x 8
8-SOIC
Non-Volatile
2 KB
8-SOIC
3.9 mm

Key Features

• * Automatic Store to EEPROM upon power-down (using optional external capacitor)
• * Automatic Recall to SRAM Array upon power-up
• * Hardware Store Pin for manual Store Operations
• * Software commands for initiating Store and Recall Operations
• * Store Time 40ms (max)
• * 2.7V -3.6V Operation
• * High-Speed I2C Interface (Up to 1MHz)
• * Non-Volatile External Event Detect Flag
• * Infinite Read and Write Cycles to SRAM Array
• * More than 1 Million Store Cycles to EEPROM
• * Data Retention: >200 Years
• * ESD Protection: >2,000V
• * Reliable Data Storage during Power Loss
• * 1mA active current (typ)
• * 40uA Standby Current  (max)
• * Software Write Protection from 1/64 of SRAM array to whole array
• * Zero Cycle delay reads and writes
• * Cascadable up to four devices
• * Industrial(I): -40oC to +85oC
• * Automotive (E): -40oC to +125oC
• * 8-Lead PDIP, SOIC and TSSOP Packages

Description

AI
The Microchip Technology Inc 47L16 EERAM is a 16Kbit SRAM with EEPROM Backup. The I2C EERAM Memory is a Low-Cost NVSRAM that Eliminates the Need for an External Battery to Retain Data. The device is organized as 2048 x 8 bits and utilizes the I2C serial interface. The 47L16 provides infinite read and write cycles to the SRAM while the EEPROM cells provide high endurance non-volatile storage of Data. With an external capacitor, SRAM data is automatically transferred to the EEPROM upon power-loss. Data can also be transferred manually by using either the hardware store pin or by software control. Upon power-up, the EEPROM data is automatically recalled to the SRAM. Recall can also be initiated through software control. The unlimited endurance makes the EERAM useful in applications that need to constantly monitor or record data. The 47L16 EERAM has a 2.7-3.6V operating voltage range and is available in 8-lead SOIC, TSSOP and PDIP packages. The EERAM works from -40C to 125C and is automotive grade qualified.