47C16-I/S16K
Active16KB 2.7-3.6V I2C SERIAL EERAM - SRAM WITH EEPROM BACK UP
Deep-Dive with AI
Search across all available documentation for this part.
47C16-I/S16K
Active16KB 2.7-3.6V I2C SERIAL EERAM - SRAM WITH EEPROM BACK UP
Deep-Dive with AI
Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | 47C16-I/S16K | 47C16 Series |
|---|---|---|
| Access Time | 400 ns | 400 ns |
| Memory Format | EERAM | EERAM |
| Memory Interface | I2C | I2C |
| Memory Organization | 2K x 8 | 2K x 8 |
| Memory Size | 2 KB | 2 KB |
| Memory Type | Non-Volatile | Non-Volatile |
| Mounting Type | Surface Mount | Surface Mount, Through Hole |
| Operating Temperature [Max] | 85 °C | 85 - 125 °C |
| Operating Temperature [Min] | -40 °C | -40 °C |
| Package / Case | Die | 8-SOIC, 8-TSSOP (0.173", 4.40mm Width), Die, 8-DIP |
| Package / Case | - | 0.3 - 3.9 mm |
| Package / Case | - | 7.62 mm |
| Supplier Device Package | Die | 8-SOIC, 8-TSSOP, Die, 8-PDIP |
| Technology | SRAM, EEPROM | SRAM, EEPROM |
| Voltage - Supply [Max] | 5.5 V | 5.5 V |
| Voltage - Supply [Min] | 4.5 V | 4.5 V |
| Write Cycle Time - Word, Page | 1 ms | 1 ms |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | WPAC | 1 | $ 0.74 | |
| 25 | $ 0.71 | |||
| 100 | $ 0.68 | |||
| 1000 | $ 0.65 | |||
| 5000 | $ 0.61 | |||
| Microchip Technology Inc | Wafer Pack | 1 | $ 0.74 | |
| 25 | $ 0.71 | |||
| 100 | $ 0.68 | |||
| 1000 | $ 0.65 | |||
| 5000 | $ 0.61 | |||
47C16 Series
16Kb 5V I2C Serial EERAM - SRAM with EEPROM Back Up
| Part | Access Time | Memory Organization | Supplier Device Package | Write Cycle Time - Word, Page | Package / Case | Package / Case | Memory Size | Memory Type | Memory Interface | Memory Format | Mounting Type | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Voltage - Supply [Max] | Voltage - Supply [Min] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology 47C16-E/SN | 400 ns | 2K x 8 | 8-SOIC | 1 ms | 3.9 mm | 8-SOIC | 2 KB | Non-Volatile | I2C | EERAM | Surface Mount | EEPROM, SRAM | -40 °C | 125 °C | 5.5 V | 4.5 V | |
Microchip Technology 47C16-I/ST | 400 ns | 2K x 8 | 8-TSSOP | 1 ms | 8-TSSOP (0.173", 4.40mm Width) | 2 KB | Non-Volatile | I2C | EERAM | Surface Mount | EEPROM, SRAM | -40 °C | 85 °C | 5.5 V | 4.5 V | ||
Microchip Technology 47C16-I/S16K | 400 ns | 2K x 8 | Die | 1 ms | Die | 2 KB | Non-Volatile | I2C | EERAM | Surface Mount | EEPROM, SRAM | -40 °C | 85 °C | 5.5 V | 4.5 V | ||
Microchip Technology 47C16T-I/ST | 400 ns | 2K x 8 | 8-TSSOP | 1 ms | 8-TSSOP (0.173", 4.40mm Width) | 2 KB | Non-Volatile | I2C | EERAM | Surface Mount | EEPROM, SRAM | -40 °C | 85 °C | 5.5 V | 4.5 V | ||
Microchip Technology 47C16T-E/SN | 400 ns | 2K x 8 | 8-SOIC | 1 ms | 3.9 mm | 8-SOIC | 2 KB | Non-Volatile | I2C | EERAM | Surface Mount | EEPROM, SRAM | -40 °C | 125 °C | 5.5 V | 4.5 V | |
Microchip Technology 47C16T-I/SN | 400 ns | 2K x 8 | 8-SOIC | 1 ms | 3.9 mm | 8-SOIC | 2 KB | Non-Volatile | I2C | EERAM | Surface Mount | EEPROM, SRAM | -40 °C | 85 °C | 5.5 V | 4.5 V | |
Microchip Technology 47C16-E/P | 400 ns | 2K x 8 | 8-PDIP | 1 ms | 0.3 in | 8-DIP | 2 KB | Non-Volatile | I2C | EERAM | Through Hole | EEPROM, SRAM | -40 °C | 125 °C | 5.5 V | 4.5 V | 7.62 mm |
Microchip Technology 47C16-I/P | 400 ns | 2K x 8 | 8-PDIP | 1 ms | 0.3 in | 8-DIP | 2 KB | Non-Volatile | I2C | EERAM | Through Hole | EEPROM, SRAM | -40 °C | 85 °C | 5.5 V | 4.5 V | 7.62 mm |
Description
General part information
47C16 Series
The Microchip Technology Inc 47C16 EERAM is a 16Kbit SRAM with EEPROM Backup. The I2C
EERAM Memory is a Low-Cost NVSRAM that Eliminates the Need for an External
Battery to Retain Data. The device is organized as 2048 x 8 bits and utilizes the I2C serial interface. The 47C16 provides infinite read and write cycles to the SRAM while the EEPROM cells provide high endurance non-volatile storage of Data. With an external capacitor, SRAM data is automatically transferred to the EEPROM upon power-loss. Data can also be transferred manually by using either the hardware store pin or by software control. Upon power-up, the EEPROM data is automatically recalled to the SRAM. Recall can also be initiated through software control. The unlimited endurance makes the EERAM useful in applications that need to constantly monitor or record data.
Documents
Technical documentation and resources