CSD16323Q3 Series

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm

Link to Manufacturer Page: https://www.ti.com/

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm

Part	Technology	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max) [Max]	Vgs (Max)
Texas Instruments CSD16323Q3	MOSFET (Metal Oxide)	150 °C	-55 °C	N-Channel	4.5 mOhm	1300 pF	3 V, 8 V	8-PowerTDFN	25 V	1.4 V	Surface Mount	21 A, 60 A	8-VSON-CLIP (3.3x3.3)	3 W	-8 V, 10 V

Key Features

• Optimized for 5-V Gate DriveUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic PackageAPPLICATIONSPoint-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing SystemsOptimized for Control or Synchronous FET ApplicationsAll other trademarks are the property of their respective ownersOptimized for 5-V Gate DriveUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic PackageAPPLICATIONSPoint-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing SystemsOptimized for Control or Synchronous FET ApplicationsAll other trademarks are the property of their respective owners

Description

This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications. This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.