MOSFET N-CH 200V 27A TO263
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | FET Type | Technology | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 60 nC | Surface Mount | N-Channel | MOSFET (Metal Oxide) | 78 mOhm | 4 V | TO-263 (D2PAK) | 200 V | -55 °C | 175 ░C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 3.75 W 150 W | 27 A | 6 V 10 V | 20 V |