CSD19533Q5A Series

100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.5 mOhm

Catalog

100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.5 mOhm

Part	Package / Case	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Technology	Rds On (Max)	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)	Vgs (Max)	Gate Charge (Max)	Package Width	Package Name	Package Length	Input Capacitance (Ciss) (Max)	FET Type	Mounting Type
Texas Instruments CSD19533Q5A	8-PowerTDFN	6 V	10 V	3.2 W 96 W	-55 °C	150 °C	100 V	MOSFET (Metal Oxide)	9.4 mOhm	100 A	3.4 V	20 V	35 nC	6 mm	8-VSONP	5 mm	2670 pF	N-Channel	Surface Mount
Texas Instruments CSD19533Q5AT	8-PowerTDFN	6 V	10 V	3.2 W 96 W	-55 °C	150 °C	100 V	MOSFET (Metal Oxide)	9.4 mOhm	100 A	3.4 V	20 V	35 nC	6 mm	8-VSONP	5 mm	2670 pF	N-Channel	Surface Mount

Catalog

100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.5 mOhm

Description

This 100 V, 7.8 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications. This 100 V, 7.8 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.