IC DRAM 4GBIT LVSTL 11 200WFBGA
Part | Operating Temperature [Max] | Operating Temperature [Min] | Memory Format | Package / Case | Memory Organization | Clock Frequency | Memory Size | Write Cycle Time - Word, Page | Supplier Device Package | Memory Type | Technology | Mounting Type | Voltage - Supply [Min] | Voltage - Supply [Max] |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Winbond Electronics W66CP2NQUAFJ TR | 105 °C | -40 °C | DRAM | 200-WFBGA | 128 M | 2.133 GHz | 512 kb | 18 ns | 200-WFBGA (10x14.5) | Volatile | SDRAM - Mobile LPDDR4 | Surface Mount | 1.06 V, 1.7 V | 1.17 V, 1.95 V |
Winbond Electronics W66CP2NQUAHJ | 105 °C | -40 °C | DRAM | 200-WFBGA | 128 M | 2.133 GHz | 512 kb | 18 ns | 200-WFBGA (10x14.5) | Volatile | SDRAM - Mobile LPDDR4 | Surface Mount | 1.06 V, 1.7 V | 1.17 V, 1.95 V |
Winbond Electronics W66CP2NQUAFJ | 105 °C | -40 °C | DRAM | 200-WFBGA | 128 M | 2.133 GHz | 512 kb | 200-WFBGA (10x14.5) | Volatile | SDRAM - Mobile LPDDR4 | Surface Mount | 1.06 V, 1.7 V | 1.17 V, 1.95 V | |
Winbond Electronics W66CP2NQUAGJ | 105 °C | -40 °C | DRAM | 200-WFBGA | 128 M | 2.133 GHz | 512 kb | 18 ns | 200-WFBGA (10x14.5) | Volatile | SDRAM - Mobile LPDDR4 | Surface Mount | 1.06 V, 1.7 V | 1.17 V, 1.95 V |
Winbond Electronics W66CP2NQUAGJ TR | 105 °C | -40 °C | DRAM | 200-WFBGA | 128 M | 2.133 GHz | 512 kb | 18 ns | 200-WFBGA (10x14.5) | Volatile | SDRAM - Mobile LPDDR4 | Surface Mount | 1.06 V, 1.7 V | 1.17 V, 1.95 V |