MOSFET N-CH 55V 64A D2PAK
| Part | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Package / Case | Mounting Type | Drain to Source Voltage (Vdss) | Technology | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | D2PAK | 81 nC | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 55 V | MOSFET (Metal Oxide) | 20 V | 1970 pF | N-Channel | 14 mOhm | 10 V | -55 °C | 175 ░C | 64 A | 3.8 W 130 W |
Infineon Technologies | TO-220AB | 81 nC | 4 V | TO-220-3 | Through Hole | 55 V | MOSFET (Metal Oxide) | 20 V | 1970 pF | N-Channel | 14 mOhm | 10 V | -55 °C | 175 ░C | 64 A | 130 W |
Infineon Technologies | D2PAK | 81 nC | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 55 V | MOSFET (Metal Oxide) | 20 V | 1970 pF | N-Channel | 14 mOhm | 10 V | -55 °C | 175 ░C | 64 A | 3.8 W 130 W |