IRFZ48NSTRLPBF

Active

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 14 MOHM;

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsIR Part Numbering System Application Note EN +1

IRFZ48NSTRLPBF

Active

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 14 MOHM;

Deep-Dive with AI

DocumentsIR Part Numbering System Application Note EN +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFZ48NSTRLPBF

Current - Continuous Drain (Id) @ 25°C	64 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	81 nC
Input Capacitance (Ciss) (Max) @ Vds	1970 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	130 W, 3.8 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRFZ48 Series

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
Infineon Technologies 94-2989	D2PAK	81 nC	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	55 V	MOSFET (Metal Oxide)	20 V	1970 pF	N-Channel	14 mOhm	10 V	-55 °C	175 ░C	64 A	3.8 W 130 W
Infineon Technologies IRFZ48NPBF	TO-220AB	81 nC	4 V	TO-220-3	Through Hole	55 V	MOSFET (Metal Oxide)	20 V	1970 pF	N-Channel	14 mOhm	10 V	-55 °C	175 ░C	64 A	130 W
Infineon Technologies IRFZ48NSTRLPBF	D2PAK	81 nC	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	55 V	MOSFET (Metal Oxide)	20 V	1970 pF	N-Channel	14 mOhm	10 V	-55 °C	175 ░C	64 A	3.8 W 130 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.79
		10	$ 1.32
		100	$ 0.95
	Digi-Reel®	1	$ 1.79
		10	$ 1.32
		100	$ 0.95
	Tape & Reel (TR)	800	$ 0.61
		1600	$ 0.60
Newark	Each (Supplied on Cut Tape)	1	$ 1.75
		10	$ 1.20
		25	$ 1.09
		50	$ 0.98
		100	$ 0.87

Description

General part information

IRFZ48 Series

The IR MOSFET family ofpower MOSFETsutilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters,SMPS,lighting, load switches as well as battery powered applications.

Documents

Technical documentation and resources

IR Part Numbering System

Application Note EN

Datasheet

Technical Data Sheet EN

Datasheet