ONET2804 Series

The ONET2804T is a high gain limiting transimpedance amplifier for parallel optical interconnects with data rates up to 28 Gbps. The device is used in conjunction with a 750 µm pitch photodiode array to convert an optical signal into a differential output voltage. An internal circuit provides the photodiode reverse bias voltage and senses the average photocurrent supplied to each photodiode. The device can be used with pin control or a two-wire serial interface to allow control of the output amplitude, gain, bandwidth and input threshold. The ONET2804T provides 21 GHz bandwidth, a gain of 10 kΩ, an input referred noise of 1.8 µArmsand a received signal strength indicator (RSSI) for each channel. 40 dB isolation between channels results in low crosstalk penalty in the receiver. The part requires a single 3.3 V supply and typically dissipates 139 mW per channel with a differential output amplitude of 500 mVPP. It is characterized for operation from –40°C to 100°C temperatures and is available in die form with a 750 µm channel pitch. To request a full data sheet, please send an email to:onet2804t_request@ti.com. The ONET2804T is a high gain limiting transimpedance amplifier for parallel optical interconnects with data rates up to 28 Gbps. The device is used in conjunction with a 750 µm pitch photodiode array to convert an optical signal into a differential output voltage. An internal circuit provides the photodiode reverse bias voltage and senses the average photocurrent supplied to each photodiode. The device can be used with pin control or a two-wire serial interface to allow control of the output amplitude, gain, bandwidth and input threshold. The ONET2804T provides 21 GHz bandwidth, a gain of 10 kΩ, an input referred noise of 1.8 µArmsand a received signal strength indicator (RSSI) for each channel. 40 dB isolation between channels results in low crosstalk penalty in the receiver. The part requires a single 3.3 V supply and typically dissipates 139 mW per channel with a differential output amplitude of 500 mVPP. It is characterized for operation from –40°C to 100°C temperatures and is available in die form with a 750 µm channel pitch. To request a full data sheet, please send an email to:onet2804t_request@ti.com.