CSD19537Q3 Series
Manufacturer: Texas Instruments
Beta
⌘K
100-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 14.5 MOHM
| Part | Package / Case | Input Capacitance (Ciss) (Max) | Gate Charge (Max) | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | Vgs (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Technology | Mounting Type | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Package Name | Package Width | Package Length | FET Type | Current - Continuous Drain (Id) (Ta) | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments | 8-PowerTDFN | 1680 pF | 21 nC | 3.6 V | 100 V | 20 V | 6 V | 10 V | MOSFET (Metal Oxide) | Surface Mount | 2.8 W 83 W | -55 °C | 150 °C | 8-VSON-CLIP | 3.3 mm | 3.3 mm | N-Channel | 50 A | 14.5 mOhm |
 Texas Instruments | 8-PowerTDFN | 1680 pF | 21 nC | 3.6 V | 100 V | 20 V | 6 V | 10 V | MOSFET (Metal Oxide) | Surface Mount | 2.8 W 83 W | -55 °C | 150 °C | 8-VSON-CLIP | 3.3 mm | 3.3 mm | N-Channel | 50 A | 14.5 mOhm |