UCC27444 Series
Automotive 4-A dual-channel low-side gate driver with -5-V input capability
Manufacturer: Texas Instruments
Catalog(2 parts)
| Part | Mounting Type | Input Type | Number of Drivers▲▼ | Current - Peak Output (Source, Sink)▲▼ | Current - Peak Output (Source, Sink)▲▼ | Supplier Device Package | Channel Type | Operating Temperature▲▼ | Operating Temperature▲▼ | Voltage - Supply▲▼ | Voltage - Supply▲▼ | Gate Type | Rise / Fall Time (Typ)▲▼ | Driven Configuration | Package / Case▲▼ | Package / Case | Logic Voltage - VIL, VIH▲▼ | Rise / Fall Time (Typ)▲▼ | Rise / Fall Time (Typ)▲▼ |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Surface Mount | Non-Inverting | 2 ul | 4 A | 4 A | 8-SOIC | Independent | 125 °C | -40 °C | 18 V | 4.5 V | N-Channel MOSFET | 1.100000002196566e-8 s, 1.100000002196566e-8 s | Low-Side | 0.003899999894201755 m | 8-SOIC | ||||
Surface Mount | Non-Inverting | 2 ul | 4 A | 4 A | 8-SOIC | Independent | 125 °C | -40 °C | 18 V | 4.5 V | IGBT, N-Channel MOSFET | Low-Side | 0.003899999894201755 m | 8-SOIC | 1.5 V, 1.600000023841858 V | 7.000000135093387e-9 s | 1.100000002196566e-8 s |
Key Features
• Qualified for automotive applicationsAEC-Q100 qualified with the following results:Device temperature grade 1: –40°C to +125°C ambient operating temperature rangeDevice HBM ESD classification level H2Device CDM ESD classification level C6Typical 4-A peak source and sink drive current for each channelINA and INB input pins capable of handling –5 VAbsolute maximum VDD voltage 20 VWide VDD operating range from 4.5 V to 18 VTwo independent gate drive channelsIndependent enable function for each outputFast propagation delays (18-ns typical)Fast rise and fall times (11-ns and 7-ns typical)1-ns typical delay matching between the two channelsSOIC8 and VSSOP8 PowerPAD™ package optionsOperating junction temperature range of –40°C to 125°CQualified for automotive applicationsAEC-Q100 qualified with the following results:Device temperature grade 1: –40°C to +125°C ambient operating temperature rangeDevice HBM ESD classification level H2Device CDM ESD classification level C6Typical 4-A peak source and sink drive current for each channelINA and INB input pins capable of handling –5 VAbsolute maximum VDD voltage 20 VWide VDD operating range from 4.5 V to 18 VTwo independent gate drive channelsIndependent enable function for each outputFast propagation delays (18-ns typical)Fast rise and fall times (11-ns and 7-ns typical)1-ns typical delay matching between the two channelsSOIC8 and VSSOP8 PowerPAD™ package optionsOperating junction temperature range of –40°C to 125°C
Description
AI
The UCC27444-Q1 is a dual-channel, high-speed, low-side gate driver that effectively drives MOSFET and GaN power switches. UCC27444-Q1 has a typical peak drive strength of 4 A, which reduces rise and fall times of the power switches, lowers switching losses, and increases efficiency. The device’s fast propagation delay (18-ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.
The UCC27444-Q1 can handle –5 V at its INx inputs, which improves robustness in systems with moderate ground bouncing. The inputs can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independently of main control logic. In the event of a system fault, the gate driver can quickly shut-off by pulling enable low. Many high-frequency switching power supplies exhibit noise at the gate of the power device, which can get injected into the output pin on the gate driver and can cause the driver to malfunction. The device’s transient reverse current and reverse voltage capability allow it to tolerate noise on the gate of the power device or pulse-transformer and avoid driver malfunction.
The UCC27444-Q1 also features low voltage operation and power on reset (POR) for improved system robustness. When there is not enough bias voltage to fully enhance the power device, the gate driver output is held low by the strong internal pull down MOSFET.
The UCC27444-Q1 is a dual-channel, high-speed, low-side gate driver that effectively drives MOSFET and GaN power switches. UCC27444-Q1 has a typical peak drive strength of 4 A, which reduces rise and fall times of the power switches, lowers switching losses, and increases efficiency. The device’s fast propagation delay (18-ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.
The UCC27444-Q1 can handle –5 V at its INx inputs, which improves robustness in systems with moderate ground bouncing. The inputs can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independently of main control logic. In the event of a system fault, the gate driver can quickly shut-off by pulling enable low. Many high-frequency switching power supplies exhibit noise at the gate of the power device, which can get injected into the output pin on the gate driver and can cause the driver to malfunction. The device’s transient reverse current and reverse voltage capability allow it to tolerate noise on the gate of the power device or pulse-transformer and avoid driver malfunction.
The UCC27444-Q1 also features low voltage operation and power on reset (POR) for improved system robustness. When there is not enough bias voltage to fully enhance the power device, the gate driver output is held low by the strong internal pull down MOSFET.