2.5A, 500V, 3.000 OHM, N-CHANNEL
| Part | FET Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Technology | Supplier Device Package | Vgs(th) (Max) @ Id | Vgs (Max) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Harris Corporation IRF820 | N-Channel | 4 A | TO-220-3 | 17 nC | 150 °C | Through Hole | 10 V | 3 Ohm | 315 pF | 80 W | MOSFET (Metal Oxide) | TO-220AB | 4 V | 30 V | 500 V |